Light emitting element, method of manufacturing the same, and semiconductor device having light emitting element

ABSTRACT

An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle over (1)} an Ni layer for forming an ohmic contact with a p-GaN layer, {circle over (2)} an Mo layer having a barrier function of preventing diffusion of impurities, {circle over (3)} an Al layer as a high-reflection electrode, {circle over (4)} a Ti layer having a barrier function, and {circle over (5)} an Au layer for improving the contact with a submount on a lead frame. The p-side electrode having this five-layered structure realizes an ohmic contact and high reflectance at the same time.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefit of priority fromthe prior Japanese Patent Application No. 2000-200298, filed Jun. 30,2000, the entire contents of which are incorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a light emitting element and, moreparticularly, to the electrode structure of a light emitting element.

2. Description of the Related Art

The recent progress of light emitting elements is remarkable. Inparticular, small-sized, low-power-consumption, high-reliability lightemitting diodes (LEDs) are developed and extensively used as displaylight sources.

Red, orange, yellow, and green LEDs currently put to practical use aremade of group III-V compound semiconductors using As and P as group Velements, e.g., AlGaAs, GaAlP, GaP, and InGaAlP. On the other hand,green, blue, and ultraviolet LEDs are made of compound semiconductorssuch as GaN. In this way, LEDS having high emission intensity arerealized.

When the luminance of these LEDs is increased, applications such asoutdoor display devices and communication light sources are presumablygreatly extended.

FIG. 1 shows the structure of a conventional violet LED.

A light emitting element 110 for emitting violet light is bonded on alead frame 120 by silver paste 130. The p- and n-electrodes of thislight emitting element 110 are connected to the lead frame 120 bybonding wires 150. The light emitting element 110 is covered with anepoxy resin 180.

FIG. 2 shows the light emitting element shown in FIG. 1.

On a sapphire (Al₂O₃) substrate 200, an n-GaN layer 210 and a p-GaNlayer 220 are formed. The n-GaN layer 210 has a recess. Since the p-GaNlayer 220 is not present on this recess, the n-GaN layer 210 is exposedin this recess of the n-GaN layer 210.

An n-side electrode 230 is formed on the recess of the n-GaN layer 210.A transparent electrode 240 having properties of transmitting light isformed on the p-GaN layer 220. In addition, a bonding electrode 250 forwire bonding is formed on the p-GaN layer 220.

When a voltage is applied between the two lead frames 120 in the LEDshown in FIGS. 1 and 2, an electric current is injected into the p-GaNlayer 220 from the bonding electrode 250 and the transparent electrode240. This electric current flows from the p-GaN layer 220 to the n-GaNlayer 210.

In the boundary (p-n junction) between the p-GaN layer 220 and the n-GaNlayer 210, light having energy h ν (h: Planck's constant, ν=c/λ, c:velocity of light, λ: wavelength) is generated when the electric currentflows. This light is emitted upward from the transparent electrode 240.

In the transparent electrode 240, however, the light transmittance andthe conductivity have a relationship of trade-off.

That is, to increase the light transmittance, the thickness of theelectrode need only be decreased. However, if the electrode thickness isdecreased, the conductivity lowers. When the conductivity lowers, noelectric current can be supplied to the whole p-n junction any longer,and this decreases the light generation efficiency. Also, to increasethe conductivity, the thickness of the electrode need only be increased.However, if the electrode thickness is increased, the lighttransmittance lowers. When the light transmittance lowers, lightgenerated in the p-n junction cannot be efficiently extracted to theoutside of the chip.

As a technology by which this problem is solved, a technology ofemitting light toward the sapphire substrate 200 is known.

FIG. 3 shows a light emitting element using this technology.

Since this light emitting element is bonded on a lead frame by flip chipbonding, an LED having this light emitting element is called a flip chiptype LED.

A high-reflectance electrode 260 is formed on p-GaN 220. Of lightgenerated in the p-n junction, light traveling to a sapphire substrate200 is directly emitted to the outside of the chip. Of light generatedin the p-n junction, light heading to the electrode 260 is reflected bythis electrode 260. The reflected light travels to the sapphiresubstrate 200 and is emitted to the outside of the chip.

The sapphire substrate 200 will be described below.

When InGaN is used as an active layer, an LED currently put to practicaluse emits light within the range of blue to green. The bandgap of thesapphire substrate 200 is approximately 3.39 eV (wavelength λ≈365 nm) atroom temperature (300K). That is, the sapphire substrate 200 hasproperties of transmitting light within the range of blue to green (thewavelength λ is approximately 400 to 550 nm).

A flip chip type LED is very effective as a technology of extractinglight to the outside of the chip with high efficiency, but also has aproblem.

That is, it is generally difficult to form an ohmic contact with thep-GaN 220 when the high-reflectance electrode 260 is used. This ohmiccontact is an essential technology to reduce the contact resistancebetween the electrode 260 and the p-GaN 220 and thereby improve theperformance of the element.

Conventionally, therefore, the electrode 260 is given a two-layeredstructure including an ohmic layer for forming an ohmic contact and ahigh-reflection layer having high reflectance. The ohmic layer improvesthe performance and the high-reflection layer increases the lightemission efficiency at the same time.

Unfortunately, the ohmic layer obtains an ohmic contact byinterdiffusion of metal atoms between this ohmic layer and the p-GaN220, so these metal atoms naturally diffuse from the ohmic layer to thehigh-reflection layer. Since this diffusion lowers the performance andreliability of the light emitting element, it must be eliminated.

FIG. 4 shows an LED made of group III-V compound semiconductors havingAs and P as group V elements.

This LED emits light within the range of red to green.

On an n-GaAs substrate 300, an n-GaAs buffer layer 310 and an n-InGaAlPcladding layer 320 are formed. On this n-InGaAlP cladding layer 320, anInGaAlP active layer 330, a p-InGaAlP cladding layer 340, and a p-AlGaAScurrent diffusing layer 350 are formed.

On the p-AlGaAs current diffusing layer 350, a p-GaAs contact layer 360and a p-side electrode 370 are formed. An n-side electrode 380 is formedon the back side of the n-GaAs substrate 300.

In a light emitting element made of group III-V compound semiconductors(e.g., GaAs, AlGaAS, and InGaAlP) having As and P as group V elements, asufficiently thick current diffusing layer (the AlGaAs current diffusinglayer 350) is formed on a p-semiconductor layer without forming anytransparent electrode on a p-semiconductor layer (the InGaAlP claddinglayer 340). This sufficiently thick current diffusing layer has afunction of evenly injecting an electric current into the entire InGaAlPactive layer 330. Since the AlGaAs current diffusing layer 350 increasesthe light generation efficiency in the vicinity of the active layer,satisfactory optical power can be assured.

In the light emitting element shown in FIG. 4, an electric current givento the p-side electrode 370 is injected into the InGaAlP active layer330 via the p-AlGaAs current diffusing layer 350. Light generated nearthe InGaAlP active layer 330 is emitted upward from the p-AlGaAs currentdiffusing layer 350 except for a region where the p-side electrode 370exists.

The film thickness, however, of the current diffusing layer 350 must beincreased to well diffuse the electric current for the reason explainedbelow. That is, if the film thickness is small, the electric current isnot diffused but injected only into the active layer 330 immediatelybelow the p-side electrode 370. Consequently, most of the lightgenerated near the active layer 330 is interrupted by the p-sideelectrode 370.

In the fabrication of an LED and an LD (Laser Diode), MO-CVD (MetalOrganic-Chemical Vapor Deposition) or MBE (Molecular Beam Epitaxy) isoften used as a crystal growth method. This is so because these methodscan well control the film thickness in the formation of a thin film andthereby can form a high-quality film.

Unfortunately, these methods have the problem that they areinappropriate to form sufficiently thick films. That is, when MO-CVD orMBE is used, a very long time is required to form the sufficiently thickcurrent diffusing layer 350 used in the light emitting element shown inFIG. 4. This worsens the productivity.

Additionally, in the light emitting element shown in FIG. 4, the lightgenerated in the InGaAlP active layer 330 is absorbed by the n-GaAssubstrate 300. This lowers the light extraction efficiency of the lightemitting element shown in FIG. 4.

As a method of solving this problem of light absorption by the GaAssubstrate 300, it is possible to form a flip chip type LED describedearlier. However, the GaAs substrate 300 is opaque. Accordingly, adevice from which this GaAs substrate 300 is removed is prepared, and atransparent substrate which transmits light is bonded to this device.

FIG. 5 shows a light emitting element using this technology.

On a p-GaP substrate 400, a p-InGaAlP adhesive layer 410 and a p-InGaAlPcladding layer 420 are formed. An InGaAlP active layer 430 is formed onthe p-InGaAlP cladding layer 420. On this InGaAlP active layer 430, ann-InGaAlP cladding layer 440 and an n-AlGaAs window layer 450 areformed.

In addition, an electrode 460 having high reflectance and an n-sideelectrode 470 are formed on the AlGaAs window layer 450. A p-sideelectrode 480 is formed on the back side of the p-GaP substrate 400.

Note that the GaP substrate 400 has a bandgap of 2.26 eV (λ≈548 nm) atroom temperature and is transparent to red light.

With this arrangement, of light generated in the InGaAlP active layer430, light traveling to the p-GaP substrate 400 is directly emitted tothe outside of the chip. Also, of light generated in the InGaAlP activelayer 430, light heading to the electrode 460 is reflected by thiselectrode 460 having high reflectance. This reflected light travels tothe p-GaP substrate 400 and is emitted to the outside of the chip.

In the electrode 460, however, it is difficult to achieve an ohmiccontact and high reflectance at the same time by the use of a singlematerial. Therefore, this electrode 460 is given a two-layered structureincluding an ohmic layer and high-reflection layer. In this case, asdescribed previously, the interdiffusion of metals between the ohmiclayer and the high-reflection layer is a problem.

FIG. 6 shows a light emitting element using the technology of bonding aGaP substrate to a device from which a GaAs substrate is removed.

In this technology, light is reflected by the bonding surface between aGaP substrate 400 and a p-side substrate 480 and extracted upward froman AlGaAs window layer 450.

Compared to the light emitting element shown in FIG. 5, this lightemitting element shown in FIG. 6 is characterized by having nohigh-reflectance electrode on the n-AlGaAs window layer 450. In thisstructure, however, an alloy layer produced in the boundary between thep-GaP substrate 400 and the p-side electrode 480 scatters and absorbslight. This makes effective extraction of light to the outside of thechip difficult.

As described above, light is extracted from the conventional lightemitting elements by the two methods: extraction from a light emittinglayer, and extraction from a substrate.

When, however, a transparent electrode for diffusing an electric currentis formed on the entire surface of a light emitting layer and light isextracted from this light emitting layer, the trade-off between thelight transmittance and the conductivity is a problem. That is, if thethickness of the transparent electrode is decreased to increase thelight transmittance, the conductivity lowers; if the thickness of thetransparent electrode is increased to increase the conductivity, thelight transmittance lowers.

In a structure in which an n-side electrode is formed on a portion of alight emitting layer and a thick current diffusing layer is formed belowthis n-side electrode, if light is to be extracted from the lightemitting layer by reflecting it by a p-side electrode formed on the backside of a GaP substrate, this light is scattered and absorbed by thebonding surface between the GaP substrate and the p-side electrode. Thisworsens the light extraction efficiency.

Also, in a structure in which an n-side electrode is formed on a portionof a light emitting layer and a thick current diffusing layer is formedbelow this n-side electrode, if light is to be extracted from thesubstrate by reflecting it by the light emitting layer, the n-sideelectrode on the light emitting layer must have high reflectance. Thishigh-reflectance n-side electrode can be realized by using a two-layeredstructure including an ohmic layer and high-reflection layer as anelectrode structure. In this case, however, the interdiffusion of metalsbetween the ohmic layer and the high-reflection layer is a problem.

BRIEF SUMMARY OF THE INVENTION

It is an object of the present invention to provide a light emittingelement electrode structure capable of simultaneously achieving an ohmiccontact and high reflectance and preventing interdiffusion of metals,thereby improving the performance and reliability of the light emittingelement and lowering the operating voltage of the element. It is anotherobject of the present invention to suppress scattering and absorption oflight in an electrode portion of a light emitting element, therebyincreasing the light emission efficiency.

A light emitting element of the present invention comprises a substrate,a light emitting element formed on the substrate to emit light, and afirst electrode contacting the light emitting layer. This firstelectrode includes an ohmic layer in ohmic contact with the lightemitting layer, a first barrier layer formed on the ohmic layer toprevent diffusion of metal atoms, and a light reflecting layer formed onthe first barrier layer to reflect light.

Additional objects and advantages of the invention will be set forth inthe description which follows, and in part will be obvious from thedescription, or may be learned by practice of the invention. The objectsand advantages of the invention may be realized and obtained by means ofthe instrumentalities and combinations particularly pointed outhereinafter.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING

The accompanying drawings, which are incorporated in and constitute apart of the specification, illustrate presently embodiments of theinvention, and together with the general description given above and thedetailed description of the embodiments given below, serve to explainthe principles of the invention.

FIG. 1 is a view showing a conventional LED;

FIG. 2 is a view showing the first example of a conventional lightemitting element;

FIG. 3 is a view showing the second example of a conventional lightemitting element;

FIG. 4 is a view showing the third example of a conventional lightemitting element;

FIG. 5 is a view showing the fourth example of a conventional lightemitting element;

FIG. 6 is a view showing the fifth example of a conventional lightemitting element;

FIG. 7 is a view showing an LED of the present invention;

FIG. 8 is a view showing the first embodiment of a light emittingelement of the present invention;

FIG. 9 is a view showing one step of a manufacturing method of thepresent invention;

FIG. 10 is a view showing one step of the manufacturing method of thepresent invention;

FIG. 11 is a view showing one step of the manufacturing method of thepresent invention;

FIG. 12 is a view showing one step of the manufacturing method of thepresent invention;

FIG. 13 is a graph showing the relationship between the electric currentand optical output of the light emitting element shown in FIG. 8;

FIG. 14 is a graph showing the relationship between the thickness andreflectance of a reflecting layer of the light emitting element shown inFIG. 8;

FIG. 15 is a graph showing the relationship between the thickness ofreflectance of an ohmic layer of the light emitting element shown inFIG. 8;

FIG. 16 is a view showing a modification of the light emitting elementshown in FIG. 8;

FIG. 17 is a view showing the second embodiment of the light emittingelement of the present invention;

FIG. 18 is a view showing a modification of the light emitting elementshown in FIG. 17;

FIG. 19 is a view showing the third embodiment of the light emittingelement of the present invention;

FIG. 20 is a view showing a modification of the light emitting elementshown in FIG. 19;

FIG. 21 is a view showing the fourth embodiment of the light emittingelement of the present invention;

FIG. 22 is a view showing one step of a manufacturing method of thepresent invention;

FIG. 23 is a view showing one step of the manufacturing method of thepresent invention;

FIG. 24 is a view showing one step of the manufacturing method of thepresent invention;

FIG. 25 is a view showing one step of the manufacturing method of thepresent invention;

FIG. 26 is a view showing a modification of the light emitting elementshown in FIG. 21;

FIG. 27 is a graph showing the relationship between the electric currentand optical output of the light emitting element shown in FIG. 21;

FIG. 28 is a view showing the fifth embodiment of the light emittingelement of the present invention;

FIG. 29 is a view showing one step of a manufacturing method of thepresent invention;

FIG. 30 is a view showing one step of the manufacturing method of thepresent invention;

FIG. 31 is a view showing one step of the manufacturing method of thepresent invention;

FIG. 32 is a view showing one step of the manufacturing method of thepresent invention;

FIG. 33 is a view showing one step of the manufacturing method of thepresent invention; and

FIG. 34 is a view showing one step of the manufacturing method of thepresent invention.

DETAILED DESCRIPTION OF THE INVENTION

Light emitting elements and semiconductor devices using these lightemitting elements according to the present invention will be describedbelow with reference to the accompanying drawings.

FIG. 7 shows a lamp type LED of the present invention.

A submount 13 is placed on a lead frame 12. This submount 13 is made of,e.g., a silicon substrate. On the upper surface of the submount 13,high-conductivity ohmic electrodes 14-1 and 14-2 having a thickness ofabout 100 μm are formed.

The positions of these ohmic electrodes 14-1 and 14-2 match thepositions of electrodes of a light emitting element 11. The ohmicelectrodes 14-1 and 14-2 are physically separated from each other, andan insulating film 19 is formed only immediately below the ohmicelectrode 14-2. This ohmic electrode 14-2 is electrically connected tothe lead frame 12 by a bonding wire 15. The lower surface of thesubmount 13 is adhered to the lead frame 12 by a conductive paste 16.

The light emitting element 11 for emitting violet light is placed on thesubmount 13. This light emitting element 11 has p- and n-sideelectrodes. The light emitting element 11 is bonded on the submount 13by flip chip bonding by using AuSn 17. The light emitting element 11 iscovered with an epoxy resin 18.

FIG. 8 shows the light emitting element shown in FIG. 7.

An n-GaN layer 21 is formed on a sapphire substrate 20. On this n-GaNlayer 21, an InGaN active layer 22, a p-AlGaN cladding layer 23, and ap-GaN layer 24 are formed. In addition, the n-GaN layer 21 has a recessat the edge of the sapphire substrate 20. Since the InGaN active layer22, the p-AlGaN cladding layer 23, and the p-GaN layer 24 do not existon this recess, the n-GaN layer 21 is exposed in this recess.

An n-side electrode 25 is formed on the n-GaN layer 21 in the recess. Ap-side electrode 26 is formed on the p-GaN layer 24. The surfaces of then-GaN layer 21, the InGaN active layer 22, the p-AlGaN cladding layer23, and the p-GaN layer 24 are covered with an insulating film 27,except for regions where the n-side electrode 25 and the p-sideelectrode 26 are formed.

The n-side electrode 25 has a four-layered structure. This four-layeredstructure includes a Ti layer 28, an Al layer 29, a Ti layer 30, and anAu layer 31 in this order from the n-GaN layer 21. The p-side electrode26 has a five-layered structure. This five-layered structure includes anNi layer 32, an Mo layer 33, an Al layer 34, a Ti layer 35, and an Aulayer 36 in this order from the p-GaN layer 24.

The Ni layer 32 is an ohmic layer for achieving an ohmic contact withthe p-GaN layer 24. The thickness of this Ni layer 32 is set to about 4nm. The Mo layer 33 and the Ti layer 35 function as barrier layers forpreventing diffusion of impurities. The Al layer 34 reflects light athigh reflectance. The Au layer 36 functions as an overcoat electrode forimproving the contact with the submount 13.

As shown in FIG. 7, the light emitting element shown in FIG. 8 is bondedby flip chip bonding on the submount 13 with the back side of thesapphire substrate 20 facing up.

In this light emitting element and the LED using the element, when avoltage is applied between the two lead frames 12 an electric current isinjected into the InGaN active layer 22 from the p-side electrode 26.When this electric current is injected into the InGaN layer 22, theInGaN active layer 22 emits light. This light generated by the LED isspontaneous emission light different from induced emission light. Hence,the light generated by the InGaN layer 22 has no directivity and isradiated in every direction from the InGaN layer 22.

In the LED shown in FIG. 7 and the light emitting element shown in FIG.8, light is extracted from the sapphire substrate 20.

That is, light traveling from the InGaN active layer 22 to the sapphiresubstrate 20 is output to the outside of the chip via the n-GaN layer 21and the sapphire substrate 20 which are transparent to the wavelength oflight. On the other hand, light traveling from the InGaN active layer 22to the p-AlGaN cladding layer 23 is reflected by the Al layer 34 havinghigh reflectance to the wavelength of light. This reflected light isoutput to the outside of the chip via the n-GaN layer 21 and thesapphire substrate 20.

In the latter case, the light generated in the InGaN layer 22 makes around trip along the path passing through the Ni layer 32 and the Molayer 33. Note that the Ni layer 32 and the Mo layer 33 are sufficientlythinned to have a low light scattering coefficient and a low lightabsorption coefficient.

A method of manufacturing the LED shown in FIG. 7 and the light emittingelement shown in FIG. 8 will be described below.

First, as shown in FIG. 9, MO-CVD is used to form an undoped GaN bufferlayer on a sapphire substrate 20 and form an n-GaN layer 21 on thisbuffer layer. Subsequently, an InGaN active layer 22 is formed on then-GaN layer 21 by MO-CVD or MBE. This InGaN active layer 22 can have anSQW (Single Quantum Well) structure or an MQW (Multiple Quantum Well)structure. In addition, a p-AlGaN cladding layer 23 and a p-GaN layer 24are formed on the InGaN active layer 22 by MO-CVD.

As shown in FIG. 10, lithography and anisotropic etching such as RIE(Reactive Ion Etching) are used to remove portions of the p-GaN layer24, the p-AlGaN cladding layer 23, the InGaN active layer 22, and then-GaN layer 21, thereby forming a recess in the edge of the sapphiresubstrate 20. After that, an insulating film 27 is formed on thesurfaces of the p-GaN layer 24, the p-AlGaN cladding layer 23, the InGaNactive layer 22, and the n-GaN layer 21 by CVD.

This recess can also be formed by isotropic etching such as wet etching,rather than by anisotropic etching such as RIE.

As shown in FIG. 11, lithography and wet etching are used to remove aportion of the insulating film 27 on the n-GaN layer 21. After that, aTi layer 28 and an Al layer 29 are formed by vacuum evaporation andlift-off. Also, the structure is annealed in a nitrogen atmosphere atabout 600° C. to form an ohmic contact between the n-GaN layer 21 andthe Ti layer 28.

As shown in FIG. 12, lithography and wet etching are used to remove aportion of the insulating film 27 on the p-GaN layer 24. After that, anNi layer 32 about 4 nm thick, an Mo layer 33 about 1 nm thick, and an Allayer 34 about 500 nm thick are formed by vacuum evaporation andlift-off.

If flash annealing is performed at a temperature of 400° C. to 780° C.(preferably 450° C.) for 20 sec immediately after the Ni layer 32 isformed, an ohmic contact between the p-GaN layer 24 and the Ni layer 32can be easily formed.

It is, however, not particularly necessary to perform this flashannealing if no natural oxide film exists in a portion between the Nilayer 32 and the p-GaN layer 24 and if this portion is satisfactorilyclean.

Subsequently, as shown in FIG. 8, vacuum evaporation and lift-off areused to form Ti layers 30 and 35 about 100 nm thick and Au layers 31 and36 about 1,000 nm thick on the Al layers 29 and 34, respectively. Toimprove adhesion between a plurality of layers forming electrodes 25 and26, flash annealing is performed at a temperature of about 200° C. ormore (favorably about 250° C.) for 20 sec.

The temperature of this flash annealing is set to be lower than that offlash annealing performed in the step shown in FIG. 12, if flashannealing is performed in the step shown in FIG. 12.

A semiconductor element of the present invention is completed by theabove method.

The semiconductor element manufactured by the above method is packagedto form an LED (semiconductor device) of the present invention.

That is, as shown in FIG. 7, the light emitting element 11 is mounted onthe submount 13 having the ohmic electrodes 14-1 and 14-2 made of an Aulayer about 3 μm thick by flip chip bonding. Consequently, the n-sideelectrode 25 is connected to the electrode 14-1 by the bump (e.g., AuSn,PbSn, AgSn ) 17, and the p-side electrode 26 is connected to theelectrode 14-2 by the bump 17.

The submount 13 on which the light emitting element 11 is mounted isadhered to the cup type lead frame 12 by using the conductive paste 16.In this state, the electrode 14-1 is electrically connected to the cuptype lead frame 12. Also, the electrode 14-2 and the lead frame 12 areelectrically connected by wire bonding. Furthermore, the light emittingelement 11 is covered with the epoxy resin 18.

If the light emitting element 11 is formed using an n-GaN substrate as aconductive substrate, rather than a sapphire substrate, the n-sideelectrode can also be formed on the back side of this n-GaN substrate.

The LED of the present invention is completed by the above method.

In the light emitting element, the LED, and the methods of fabricatingthem, the p-side electrode 26 has the Ni layer 32 for forming an ohmiccontact with the p-GaN layer 24, the Mo layer 33 having a barrierfunction of blocking impurity diffusion, and the Al layer 34 having highreflectance to light generated in the element.

Generally, an ohmic contact to a GaN layer is difficult to form whenmetals such as Al and Ag having high reflectance to visible light areused. Therefore, the p-side electrode is conventionally composed of anohmic layer for forming an ohmic contact and a high-reflection layer forreflecting light generated in the element.

When an LED having this electrode structure is continuously operated,however, interdiffusion of metal atoms occurs between the ohmic layerand the high-reflection layer owing to the influence of heat. Thisraises the forward voltage of the light emitting diode and readilydeteriorates the element. And the electrode sometimes comes off.

By contrast, in the present invention the barrier layer (e.g., Mo layer)33 made of a high-melting metal is formed between the Ni layer 32 as anohmic layer and the Al layer 34 as a high-reflection layer. This barrierlayer prevents interdiffusion of metal atoms between the ohmic layer andthe high-reflection layer. Accordingly, the present invention canprevent a rise of the operating voltage of the LED.

The ohmic layer (Ni layer 32) and the barrier layer (Mo layer 33) aremade of materials substantially opaque to light generated in theelement. By decreasing the thicknesses of these layers, the lightreflectance of the high-reflection layer (Al layer 34) can be increased.

FIG. 13 shows the emission characteristic of the GaN violet type LED ofthe present invention.

This emission characteristic is represented by the relationship betweenthe electric current injected into the LED and its optical output(emission intensity). Referring to FIG. 13, the solid line indicates theemission characteristic of the GaN violet type LED according to thepresent invention, and the broken line indicates that of a conventionalLED.

As shown in FIG. 13, when the same electric current is injected intothese LEDs, the optical output of the LED according to the presentinvention is about 1.7 times that of the conventional LED. For example,when the electric current injected into the LEDs is 20 mA (voltage 4.3V), the optical output of the conventional LED is about 4.0 mW, whereasthe optical output of the LED of the present invention is about 6.9 mW(emission wavelength λp=450 nm).

Also, after the LED of the present invention was operated for 1,000 hrat room temperature by using a driving current of 20 mA, the opticaloutput reduced to about 80% of the initial value. This is a very goodresult compared to the conventional LED and indicates that thereliability of the LED of the present invention improved.

FIG. 14 shows the relationship between the thickness of the Mo layer asa barrier layer and the light reflectance of the Al layer as ahigh-reflection layer.

In this relationship, the thickness of the Ni layer as an ohmic layer isfixed to 4 nm, and the thickness of the Al layer as a high-reflectionlayer is fixed to 100 nm.

FIG. 15 shows the relationship between the thickness of the Ni layer asan ohmic layer and the Al layer as a high-reflection layer.

In this relationship, the thickness of the Mo layer as a barrierelectrode is fixed to 1 nm, and the thickness of the Al layer as ahigh-reflection layer is fixed to 100 nm.

As shown in FIGS. 14 and 15, the light reflectance of the Al layerlargely depends upon the thicknesses of the barrier layer and the ohmiclayer; the smaller the thicknesses of these layers, the higher the lighttransmittance. In particular, the thickness of the ohmic layer intowhich light generated in the InGaN active layer initially enters ispreferably as small as possible. For example, when this ohmic layer ismade of Ni, its thickness is set to 10 nm or less.

The ohmic layer can be formed using materials such as Pt, Mg, Zn, Be,Ag, Au, and Ge and compounds consisting primarily of these materials, inaddition to Ni. Also, the barrier layer can be formed using materialssuch as W, Pt, Ni, Ti, Pd and V and compounds consisting primarily ofthese materials, in addition to Mo.

These ohmic layer and barrier layer can be integrated into a singlelayer if they are formed using the same material (Ni or Pt).

In the light emitting element of the present invention, the Ti layer 35as a barrier layer and the Au layer 36 as an overcoat layer are formedon the Al layer 34 as a high-reflection layer. Commonly, a conductorpattern of Au is written on a submount on which a light emitting elementis to be mounted. A light emitting element is adhered onto thisconductor pattern.

If, however, a high-reflection layer made of Al or Ag is brought intodirect contact with the Au conductor pattern, a high-resistance layermay be formed on the bonding surface between them, or the bonding powerbetween them weakens.

In the present invention, therefore, an overcoat layer made of the samematerial as the conductor pattern (e.g., Au) on the submount is formed,thereby preventing the generation of a high-resistance layer andincreasing the bonding power between the light emitting element and thesubmount.

In addition, in the present invention the barrier layer (Ti layer 35)made of a high-melting metal is formed between the overcoat layer andthe high-reflection layer. Since this barrier layer prevents diffusionof metal atoms from the overcoat layer to the high-reflection layer, thebonding power between the overcoat layer and the conductor pattern canbe increased.

When the conductor pattern and the high-reflection layer are made of thesame material, it is of course unnecessary to form ahigh-melting-material barrier layer between the overcoat layer and thehigh-reflection layer.

This barrier layer interposed between the overcoat layer and thehigh-reflection layer can be formed using materials such as W, Mo, Pt,Ni, Ti, Pd, and V and compounds consisting primarily of these materials,in addition to Ti.

Furthermore, in the present invention the light emitting element is notin direct contact with the lead frame but is mounted on the lead framevia the submount. In this structure, heat generated in the lightemitting element is efficiently radiated via the submount. This canincrease the heat radiation efficiency and improve the reliability ofthe LED.

FIG. 16 shows a modification of the light emitting element shown in FIG.8.

On an n-GaP substrate 40, an n-InGaAlP adhesive layer 41 and ann-InGaAlP cladding layer 42 are formed. On this n-InGaAlP cladding layer42, an InGaAlP active layer 43 is formed. As InGaAlP, a directtransition type band structure is used to obtain red light to greenlight, unlike AlGaAs for which an indirect transition type bandstructure is used to obtain green light.

On the InGaAlP active layer 43, a p-InGaAlP cladding layer 44 and ap-GaAs contact layer 45 are formed. A p-side electrode 47 is formed onthe p-GaAs contact layer 45, and an n-side electrode 48 is formed on theback side of the n-GaP substrate 40. The surfaces of the n-InGaAlPcladding layer 42, the InGaAlP active layer 43, the p-InGaAlP claddinglayer 44, and the p-GaAs contact layer 45 are covered with an insulatingfilm 46, except for a region where the p-side electrode 47 is formed.

The p-side electrode 47 includes an AuZn layer 49, an Mo layer 50, an Allayer 51, a Ti layer 52, and an Au layer 53. The Auzn layer 49 forms anohmic contact with the p-GaAs contact layer 45. The Mo layer 50 is abarrier layer having a function of preventing interdiffusion of metalatoms. The Al layer 51 is a high-reflection layer having a function ofreflecting light generated in the element at high reflectance. The Tilayer 52 is a barrier layer having a function of preventinginterdiffusion of metal atoms. The Au layer 53 is an overcoat layer forimproving the contact with a submount.

As shown in FIG. 7, this light emitting element shown in FIG. 16 ismounted on a submount 13 by flip chip bonding, with the back side of then-GaP substrate 40 facing up.

In this modification, the n-side electrode 48 is formed on the back sideof the n-GaP substrate 40. That is, this n-side electrode 48 is formedon the surface different from the surface on which the p-side electrode47 is formed. Hence, the n-side electrode and the lead frame areelectrically connected directly by a bonding wire. However, the n-sideelectrode 48 and the p-side electrode 47 can also be formed on the samesurface.

In this light emitting element as described above, the barrier layer(e.g., an Mo layer) made of a high-melting metal is formed between theohmic layer (e.g., an AuZn layer) and the high-reflection layer (e.g.,an Al layer). Since this barrier layer prevents interdiffusion of metalatoms between the ohmic layer and the high-reflection layer, a rise ofthe operating voltage of the LED can be prevented. Consequently, effectssimilar to those of the light emitting element shown in FIG. 8 can beobtained.

A method of fabricating the p-side electrode 47 of the light emittingelement according to the present invention is the same as the method offabricating the p-side electrode of the light emitting element shown inFIG. 8, so a detailed description thereof will be omitted.

FIG. 17 shows the second embodiment of the light emitting element of thepresent invention.

This light emitting element relates to a GaN violet type LED.

Compared to the light emitting element (FIG. 8) explained in the abovefirst embodiment, the characteristic feature of the light emittingelement according to this embodiment is the structure of a p-sideelectrode 26.

An Ni layer 32 as an ohmic layer in contact with a p-GaN layer 24 ismade up of a plurality of dots (islands) arranged into arrays. An Molayer 33 as a barrier layer is formed on the Ni layer 32 and the p-GaNlayer 24. Accordingly, the p-GaN layer 24 is in contact with both the Nilayer 32 and the Mo layer 32.

Of light generated in an InGaN active layer 22, a portion of lightheading to a p-AlGaN cladding layer 23 passes through the Ni layer 32and the Mo layer 33 with low scattering and low absorption. Anotherportion of the light heading to the p-AlGaN cladding layer 23 passesonly through the Mo layer 33 without passing through the Ni layer 32.

In this light emitting element as described above, the ohmic layer (Nilayer) for forming an ohmic contact with the p-GaN layer does not coverthe entire surface of the p-side electrode; this ohmic layer partiallycovers the p-side electrode as, e.g., a plurality of dots (islands)arranged into arrays. Therefore, in a region where this ohmic layerexists, an ohmic contact is formed between the p-side electrode and thep-GaN layer. In a region where the ohmic layer does not exist, only thebarrier layer is formed between the p-GaN layer and the Al layer as ahigh-reflection layer, thereby shortening the distance between the twolayers.

In a region where the ohmic layer is absent, therefore, the lighttransmittance can be increased accordingly. As a consequence, the lightextraction efficiency can be increased.

The ohmic layer can be formed using materials such as Ni, Pt, Mg, Zn,Be, Ag, Au, and Ge and compounds consisting primarily of thesematerials. The barrier layer can be formed using materials such as Mo,W, Pt, Ni, Ti, Pd and V and compounds consisting primarily of thesematerials.

The ohmic layer and the barrier layer can also be formed using the samematerial (e.g., Ni or Pt).

FIG. 18 shows a modification of the light emitting element shown in FIG.17.

On an n-GaP substrate 40, an n-InGaAlP adhesive layer 41 and ann-InGaAlP cladding layer 42 are formed. On this n-InGaAlP cladding layer42, an InGaAlP active layer 43 is formed.

On the InGaAlP active layer 43, a p-InGaAlP cladding layer 44 and ap-GaAs contact layer 45 are formed. A p-side electrode 47 is formed onthe p-GaAs contact layer 45, and an n-side electrode 48 is formed on theback side of the n-GaP substrate 40. The surfaces of the n-InGaAlPcladding layer 42, the InGaAlP active layer 43, the p-InGaAlP claddinglayer 44, and the p-GaAs contact layer 45 are covered with an insulatingfilm 46, except for a region where the p-side electrode 47 is formed.

The p-side electrode 47 includes an AuZn layer 49, an Mo layer 50, an Allayer 51, a Ti layer 52, and an Au layer 53. The AuZn layer 49 forms anohmic contact with the p-GaAs contact layer 45. The Mo layer 50 is abarrier layer having a function of preventing interdiffusion of metalatoms. The Al layer 51 is a high-reflection layer having a function ofreflecting light generated in the element at high reflectance. The Tilayer 52 is a barrier layer having a function of preventinginterdiffusion of metal atoms. The Au layer 53 is an overcoat layer forimproving the contact with a submount.

The AuZn layer 49 as an ohmic layer is made up of a plurality of dots(islands).

As shown in FIG. 7, this light emitting element shown in FIG. 18 ismounted on a submount 13 by flip chip bonding, with the back side of then-GaP substrate 40 facing up.

In this modification, the n-side electrode 48 is formed on the back sideof the n-GaP substrate 40. That is, this n-side electrode 48 is formedon the surface different from the surface on which the p-side electrode47 is formed. Hence, the n-side electrode and the lead frame areelectrically connected directly by a bonding wire. However, the n-sideelectrode 48 and the p-side electrode 47 can also be formed on the samesurface.

In this light emitting element as described above, the barrier layer(e.g., an Mo layer) made of a high-melting metal is formed between theohmic layer (e.g., an AuZn layer) and the high-reflection layer (e.g.,an Al layer). Since this barrier layer prevents interdiffusion of metalatoms between the ohmic layer and the high-reflection layer, a rise ofthe operating voltage of the LED can be prevented. Consequently, effectssimilar to those of the light emitting element shown in FIG. 8 can beobtained.

FIG. 19 shows the third embodiment of the light emitting element of thepresent invention.

On a sapphire substrate 20, an n-GaN layer 21 and a light emitting layer55 are formed. For example, this light emitting layer 55 includes, asshown in FIG. 8, an InGaN active layer 22 on the n-GaN layer 21, ap-AlGaN cladding layer 23 on the InGaN active layer 22, and a p-GaNlayer 24 on the p-AlGaN cladding layer 23.

A p-side electrode 26 is formed on the light emitting layer 55. Forexample, this p-side electrode 26 includes, as shown in FIG. 8, an ohmiclayer 32, a barrier layer 33, a high-reflection layer 34, a barrierlayer 35, and an overcoat layer 36.

The p-side electrode 26 is placed in a central portion on the uppersurface of the light emitting layer 55. Also, an n-side electrode 25 isplaced at the edge on the upper surface of the n-GaN layer 21 tosurround the light emitting layer 55.

The LED shown in FIG. 7 is completed by mounting the above lightemitting element on a lead frame by using a submount and covering thelight emitting element with an epoxy resin.

This light emitting element can achieve the following effects inaddition to the effects of the light emitting elements of theaforementioned first and second embodiments.

First, since the p-side electrode is positioned in the central portionof the chip, the light emitting element is readily aligned when mountedon the submount. This can facilitate the fabrication of the LED andthereby improve the throughput.

Second, since the n-side electrode surrounds the light emitting layer,an electric current flowing from the p-side to the n-side electrode isevenly injected into the active layer. Hence, the light emitting layercan generate light with high efficiency.

FIG. 20 shows a modification of the light emitting element shown in FIG.19.

The characteristic feature of the light emitting element of thisembodiment is that the shape of a light emitting layer 55 is differentfrom that of the light emitting element shown in FIG. 19.

In the light emitting element shown in FIG. 19, the light emitting layer55 is formed in a wide region including a region immediately below thep-side electrode 26, and the shape of this light emitting layer 55 is asquare similar to that of the chip. By contrast, in the light emittingelement shown in FIG. 20, the light emitting layer 55 is formed only ina region immediately below the p-side electrode 26 and a narrow regionsurrounding that region, and the shape of this light emitting layer 55is a circle similar to that of the p-side electrode.

In the light emitting element of this embodiment, the light emittingregion is limited. Therefore, the light emitting element of thisembodiment can be used as a signal source of an optical fiber system orin a system required to operate at high speed.

In the light emitting elements shown in FIGS. 19 and 20, the shapes ofthe n-side electrode 25, the p-side electrode 26, and the light emittingelement 55 can be variously changed. For example, the p-side electrode26 can be a square, or the n-side electrode. 25, the p-side electrode26, and the light emitting layer 55 can take shapes other than a circleand square.

The light emitting element according to the third embodiment describedabove is applicable to, e.g., a GaN light emitting element, GaAs lightemitting element, and GaP light emitting element. This light emittingelement is also applicable to an LED which uses a conductive substrateinstead of a sapphire substrate.

FIG. 21 shows the fourth embodiment of the light emitting element of thepresent invention.

The light emitting element of this embodiment is applied to a GaAs lightemitting element and GaP light emitting element, and generates red lighthaving a wavelength of, e.g., 620 nm.

On a p-GaP substrate 60, a p-InGaAlP adhesive layer 61 and a p-InAlPcladding layer 62 are formed. An InGaAlP active layer 63 is formed onthe p-InAlP cladding layer 62. An n-type InAlP cladding layer 64 isformed on the InGaAlP active layer 63, and an n-InGaAlP window layer 65is formed on this n-type InAlP cladding layer 64. Also, an n-GaAscontact layer 66 is formed on the n-InGaAlP window layer 65, and ann-side electrode 67 is formed on the n-GaAs contact layer 66. Inaddition, a p-side electrode 68 and a light reflecting film 69 areformed on the back side of the p-GaP substrate 60.

A method of manufacturing the light emitting element shown in FIG. 21will be described below.

First, as shown in FIG. 22, MO-CVD is used to form an etching stopper(e.g., InGaP) 71, an n-GaAs contact layer 66 about 0.1 μm thick, ann-In_(0.5)Ga_(0.15)Al_(0.35)P window layer 65 about 0.5 μm thick, and ann-In_(0.5)Al_(0.5)P cladding layer 64 about 1 μm thick in this order onan n-GaAs substrate 70.

Subsequently, MO-CVD or MBE is used to form an undopedIn_(0.5)Ga_(0.1)Al_(0.4)P active layer 63 about 0.2 μm thick on then-InAlP cladding layer 64, and form a p-In_(0.5)Al_(0.5)P cladding layer62 about 1 μm thick and a p-In_(0.5)Ga_(0.15)Al_(0.35)P adhesive layer61 about 0.05 μm thick on the undoped InGaAlP active layer 63.

Examples of the gallium material are triethylgallium (TEG: Ga(C₂H₅)₃)and trimethylgallium (TMG: Ga(CH₃)₃). Examples of the aluminum materialare triethylaluminum (TEA: Al(C₂H₅)₃) and trimethylaluminum (TMA:[Al(CH₃)₃]₂). Examples of the indium material are triethylindium (TEI:In(C₂H₅)₃) and trimethylindium (TMI: In(CH₃)₃). An example of thephosphorous material is tertiary-butylphosphine (TBP: C₄H₉PH₂).

As an n-impurity, Si, Te, or the like is used. As a p-impurity, Zn, Be,or the like is used.

Subsequently, as shown in FIG. 23, a p-GaP substrate 60 about 200 μmthick is adhered onto the p-InGaAlP adhesive layer 61 by thermal contactbonding. Before this adhesion, the adhesion surfaces of the p-InGaAlPadhesive layer 61 and the p-GaP substrate 60 are well cleaned.

Also, the n-GaAs substrate 70 is removed by etching.

As shown in FIG. 24, the etching stopper 71 is removed.

As shown in FIG. 25, the n-GaAs contact layer 66 is patterned byphotolithography and etching.

After that, an n-side electrode 67 is formed on the n-GaAs contact layer66, and a p-side electrode 68 and a light reflecting layer (e.g., Au) 69are formed on the back side of the p-GaP substrate 70. In this manner,the light emitting element shown in FIG. 21 is obtained.

The lamp type LED is completed by mounting the light emitting elementshown in FIG. 21 on a lead frame and covering this light emittingelement with an epoxy resin.

This LED emits red light when an electric current flowing from thep-side to the n-side electrode is injected into the InGaAlP active layer63.

Of the red light having a wavelength of 620 nm generated in the InGaAlPactive layer 63, light heading to the n-InAlP cladding layer 64 and then-InGaAlP window layer 65 is directly emitted to the outside of thechip. Of the red light having a wavelength of 620 nm generated in theInGaAlP active layer 63, light heading to the p-GaP substrate 60 istransmitted through the transparent p-GaN substrate 60 and reaches thep-side electrode 68 and the light reflecting layer 69. This light isreflected by the light reflecting layer 69. The reflected light reachesthe n-InAlP cladding layer 64 and the n-InGaAlP window layer 65 and isemitted to the outside of the chip.

When the light emitting element of this embodiment was mounted in apackage having an emission angle of 10° and operated by a drivingcurrent of 20 mA, the optical output rose to 1.2 times (17 cd) that of aconventional light emitting element.

This light emitting element is applied to a GaAs or GaP light emittingelement having a flip chip structure. Also, the light emitting elementof this embodiment can reduce the loss produced in the alloy layerbetween the transparent substrate and the electrode, because the lightreflecting layer is formed in a portion of the back side of thetransparent substrate. As a consequence, in a region where the lightreflecting layer is present, light can be efficiently reflected andemitted to the outside of the chip.

The material of this light reflecting layer is, e.g., Au. This is sobecause Au has high reflectance to light having a wavelength of 620 nm,which is generated in the InGaAlP active layer.

Table 1 shows the values of reflectance R and thermal conductivity k ofmetal materials.

Assume that these metal materials are in contact with the GaP substrate,and that the reflectance is a numerical value with respect to lighthaving a wavelength of 620 nm. Refractive index n of GaP at thiswavelength is 3.325. Assume also that the thermal conductivity is anumerical value at a temperature of 300K. TABLE 1 METAL REFLECTANCE RTHERMAL CONDUCTIVITY k MATERIAL [%] [W/m · K] Al 77.6 237 Cr 29.1 90.3Co 37.4 99.2 Cu 87.7 398 Au 92.1 315 Hf 13 23 Mo 20.4 138 Ni 37.5 90.5Nb 18 53.7 Os 5.3 87.3 Ag 88.2 427 Ta 20.3 57.5 Ti 25.8 21.9 W 15 178

The characteristics required for a light reflecting layer are highreflectance and high thermal conductivity. In a light emitting elementusing InGaAlP, a lowering of the emission efficiency by heat issignificant. Therefore, efficiently radiating heat generated near theactive layer to the outside of the element is important. For thispurpose, as is apparent from Table 1, a material having high reflectanceand high thermal conductivity, e.g., Au, Ag, Cu, or Al, is used as alight reflecting layer of a light emitting element.

Referring to FIG. 21, the area of the p-side electrode 68 and the areaof the light reflecting layer 69 have the following relationship. Thatis, when the area of the p-side electrode 68 is made larger than that ofthe light reflecting layer 69, the contact resistance decreases, but thelight reflection efficiency lowers; when the area of the lightreflecting layer 69 is made larger than that of the p-side electrode 68,the light reflection efficiency rises, but the contact resistanceincreases.

In the light emitting element of this embodiment, the area ratio of thep-side electrode 68 to the light reflecting layer 69 is set at, e.g.,1:1. However, this ratio can be appropriately changed in accordance withthe specification of a light emitting element. For example, in a lightemitting element in which a rise of the contact resistance is of noproblem, the area of the light reflecting layer 69 is made larger thanthat of the p-side electrode 68 to raise the light reflectionefficiency.

FIG. 26 shows a modification of the light emitting element shown in FIG.21.

The light emitting element of this modification is characterized in thatthe structure of a light reflecting layer is different from that of thelight emitting element shown in FIG. 21.

A light reflecting layer 69 on the back side of a p-GaP substrate 60 iscomposed of an Si layer 72 and an Al₂O₃ layer 73. The thicknesses of theSi layer 72 and the Al₂O₃ layer are so set as to be λ/4n (n indicatesthe refractive indices of Si and Al₂O₃ with respect to the wavelength oflight generated in the active layer) with respect to a wavelength λ oflight generated in the active layer.

The Si layer 72 and the Al₂O₃ 73 have a large refractive indexdifference, and the absorption coefficient of the Si layer 72 having ahigh refractive index is small. Therefore, the light reflecting layer 69can achieve high reflectance. However, the Al₂O₃ layer 68 having a lowrefractive index has small thermal conductivity and hence deterioratesthe thermal characteristics of the element.

FIG. 27 shows the relationship between the electric current and theoptical output of the light emitting element shown in FIG. 21.

Referring to FIG. 27, line {circle over (1)} corresponds to the lightemitting element shown in FIG. 21; line {circle over (2)}, the lightemitting element shown in FIG. 26; and line {circle over (3)}, aconventional light emitting element.

According to this relationship, the light emitting element shown in FIG.21 is most superior in optical output and durability. The optical outputof the light emitting element shown in FIG. 26 saturates when theinjection current increases under the influence of low thermalconductivity of Al₂O₃. However, when the injection current is 150 mA orless, the optical output of this light emitting element shown in FIG. 26is higher than that of the conventional light emitting element.

When the driving current is 20 mA, the characteristic of the lightemitting element shown in FIG. 26 is substantially the same as that ofthe light emitting element shown in FIG. 21. Accordingly, it is wellsignificant to use the light emitting element of this modification as anLED.

FIG. 28 shows the fifth embodiment of the light emitting element of thepresent invention.

This embodiment relates to a light emitting element which generates620-nm red light in a GaAs light emitting element and a GaP lightemitting element.

A light emitting layer 81 is formed on a portion of an n-GaP substrate80. This light emitting layer 81 includes an n-InGaAlP contact layer 82,an n-InAlP cladding layer 83, an InGaAlP active layer 84, a p-InAlPcladding layer 85, and a p-InGaAlP contact layer 86.

An undoped GaP current limiting layer 87 is formed on the other portion(a region where the light emitting layer 81 is not formed) of the n-GaPsubstrate 80. A p-GaP layer 88 is formed on the light emitting layer 81and the undoped GaP current limiting layer 87. A p-side electrode 89 isformed on the p-GaP layer 88. An n-side electrode 90 and a lightreflecting layer 91 are formed on the back side of the n-GaP substrate80.

Note that the n-side electrode 90 is positioned immediately below thelight emitting layer 81.

A method of manufacturing the light emitting element shown in FIG. 28will be described below.

First, as shown in FIG. 29, MO-CVD is used to form ann-In_(0.5)Ga_(0.15)Al_(0.35)P contact layer 82, an n-In_(0.5)Al_(0.5)Pcladding layer 83, an In_(0.5)Ga_(0.1)Al_(0.4)P active layer 84, ap-In_(0.5)Al_(0.5)P cladding layer 85, and ap-In_(0.5)Ga_(0.15)Al_(0.35)P contact layer 86 in this order on ann-GaAs substrate 92. Subsequently, MO-CVD is used to form an undopedGaAs protective layer 93 and an SiO₂ mask layer 94 in this order on thep-In_(0.5)Ga_(0.15)Al_(0.35)P contact layer 86.

Next, as shown in FIG. 30, the SiO₂ mask layer 94 is patterned byphotolithography and wet etching. This SiO₂ mask layer 94 is used as amask to etch the GaAs protective layer 93, thep-In_(0.5)Ga_(0.15)Al_(0.35)P contact layer 86, the p-In_(0.5)Al_(0.5)Pcladding layer 85, the In_(0.5)Ga_(0.1)Al_(0.4)P active layer 84, then-In_(0.5)Al_(0.5)P cladding layer 83, and then-In_(0.5)Ga_(0.15)Al_(0.35)P contact layer 82 by RIE, thereby forming aridge-shaped light emitting layer 81.

As shown in FIG. 31, an undoped GaP current limiting layer 87 is formedon the n-GaAs substrate 92 by CVD.

As shown in FIG. 32, a p-GaP layer 88 is formed on the light emittinglayer 81 and the undoped GaP current limiting layer 87 by CVD. Afterthat, the n-GaAs substrate 92 is entirely etched away to form a deviceas shown in FIG. 33.

As shown in FIG. 34, an n-GaP substrate 80 is bonded to the device shownin FIG. 33.

After that, as shown in FIG. 28, a p-side electrode 89 is formed on thep-GaP layer 88, and an n-side electrode 90 and a light reflecting layer91 are formed on the back side of the n-GaP substrate 80.

Note that the light emitting layer 81 is positioned in a central portionof the n-GaP substrate 80 (or the chip) and surrounded by the undopedGaP current limiting layer 87.

Of red light generated in the InGaAlP active layer 84 of this lightemitting element, light traveling to the p-side electrode is emitted tothe outside of the chip through the p-InAlP cladding layer 85, thep-InGaAlP contact layer 86, and the p-GaP layer 88. Of the red lightgenerated in the InGaAlP active layer 84, light heading to the n-GaPsubstrate 80 is reflected by the light reflecting layer 91 through then-GaP substrate 80 which is a transparent substrate. This reflectedlight travels to the p-side electrode and is emitted to the outside ofthe chip.

In this structure, the n-side electrode 90 is positioned immediatelybelow the InGaAlP active layer 83, and the light reflecting layer 91 ispositioned immediately below the GaP current limiting layer 87. That is,light heading to the n-GaP substrate 80 is reflected by the lightreflecting layer 91. Consequently, the reflected light is emitted to theoutside of the chip through the GaP current limiting layer 87 whosebandgap energy is larger than its emission energy, without passingthrough the light emitting layer 81.

Since the reflected light does not pass through the light emitting layer81, this reflected light is not again absorbed by the light emittinglayer 81. Accordingly, the light emitting element of this embodiment canachieve sufficiently high light extraction efficiency. For example, whenthe light emitting element mounted in a package having an emission angleof 10° is operated with a driving current of 20 mA, the optical outputis 1.4 times (about 20 cd) that of a conventional light emittingelement.

In each of the first, second, and third embodiments of the lightemitting element of the present invention, light generated in the activelayer and traveling to the p-side electrode is reflected by the internalhigh-reflection layer of the p-side electrode, so the entire light isextracted to the outside of the chip from the back side of thesubstrate. In this arrangement, the electrode structure of the p-sideelectrode includes at least an ohmic layer for an ohmic contact, abarrier layer for preventing diffusion of metal impurities, and ahigh-reflection layer for reflecting light generated in the active layerwith high reflectance.

The barrier layer is made of a high-melting material and preventsinterdiffusion of metal atoms caused by heat between the ohmic layer andthe high-reflection layer. Also, since the thicknesses of the ohmiclayer and barrier layer are made as small as possible, the lightabsorption loss in these ohmic layer and barrier layer can be minimized.Therefore, in this p-side electrode it is possible to realize an ohmiccontact and high light reflectance at the same time and suppress a riseof the operating voltage by heat.

As a consequence, the light emitting element and the semiconductordevice using the same according to the present invention can realizehigh reliability and high performance. When the ohmic layer is made upof a plurality of dots (islands) arranged into arrays, it is possible torealize not only an ohmic contact but also high light extractionefficiency by high reflectance in a region where no ohmic layer exists,because absorption and loss of light can be reduced by the amount ofohmic layer.

In each of the fourth and fifth embodiments of the light emittingelement of the present invention, light generated in the active layerand traveling to the substrate is reflected by the light reflectinglayer, so the entire light is extracted to the outside of the chip fromthe surface of the p-GaP layer on the p-side electrode side.

Also, the electrode and the light reflecting layer are alternatelyarranged on the back side of the substrate. In a region where theelectrode is present, scattering and absorption of light occur; in aregion where the light reflecting layer is present, light is reflectedwith high efficiency. Accordingly, the light emitting element of thepresent invention can increase the light extraction efficiency andimprove the performance of both the element and the semiconductor deviceusing the element, compared to conventional light emitting elements.

Furthermore, the light emitting layer is formed in the shape of a ridgeand surrounded by a transparent material (undoped GaP). In thisstructure, an electrode is placed immediately below the light emittinglayer, and a light reflecting layer is placed immediately below thetransparent material. Consequently, it is possible to prevent an eventin which light reflected by the light reflecting layer is again absorbedin the light emitting layer, and to increase the light extractionefficiency.

As has been explained above, the electrode structure of the presentinvention can realize an ohmic contact and high light reflectance at thesame time, and can also prevent interdiffusion of metal atoms between aplurality of layers forming the electrode. This makes it possible toincrease the external quantum efficiency of a light emitting element,lower the operating voltage, and improve the reliability.

Additional advantages and modifications will readily occur to thoseskilled in the art. Therefore, the invention in its broader aspects isnot limited to the specific details and representative embodiments shownand described herein. Accordingly, various modifications may be madewithout departing from the spirit or scope of the general inventiveconcept as defined by the appended claims and their equivalents.

1-60. (canceled)
 61. A light emitting element comprising: a substrate; alight emitting layer formed on said substrate to emit light, whereinsaid light emitting layer includes a first semiconductor layer of afirst conductivity type, an active layer formed on said firstsemiconductor layer to emit the light and a second semiconductor layerof a second conductivity type formed on said active layer; a firstelectrode contacting said second semiconductor layer; a plurality ofsecond electrodes contacting said substrate; and a plurality of lightreflecting layers contacting said substrate and arranging between saidplurality of second electrodes.
 62. The light emitting element accordingto claim 61, wherein each of said plurality of light reflecting layerscomprises a first reflecting layer and a second reflecting layer. 63.The light emitting element according to claim 62, wherein said firstreflecting layer is composed of an Si layer.
 64. The light emittingelement according to claim 62, wherein said second reflecting layer iscomposed of an Al₂O₃ layer.
 65. The light emitting element according toclaim 61, wherein the area of said plurality of light reflecting layersis equal to that of said plurality of second electrodes.
 66. The lightemitting element according to claim 61, wherein the area of saidplurality of light reflecting layers is larger than that of saidplurality of second electrodes.
 67. The light emitting element accordingto claim 61, wherein the area of said plurality of light reflectinglayers is smaller than that of said plurality of second electrodes. 68.The light emitting element according to claim 61, wherein said substrateis a conductive substrate.
 69. The light emitting element according toclaim 68, wherein said substrate includes Ga.
 70. The light emittingelement according to claim 61, wherein said first semiconductor layerand said second semiconductor layer include Ga.
 71. The light emittingelement according to claim 61, wherein said first electrode is locatedat a place which is above the center of said substrate.